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IGZO소자 논문 publish in JJAP
작성자 정주환
날짜 2012.02.15
조회수 521
"Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors
after Crystallization"


Byung Du Ahn, Hyun Soo Shin, Dong Lim Kim,
Seung Min Lee,
Jin-Seong Park, Gun Hee Kim, and Hyun Jae Kim

published
in Japanese Journal of Applied Physics 51 (2012) 015601
다음글
ZnO 논문 publish in JKPS
이전글
IGZO 소자 논문 publish in J Electroceram