화학공학과

교수소개

반도체소자공정 연구실은 화합물반도체 및 나노소재를 이용한 발광다이오드, 가스 및 바이오 센서, Power 및 rf 소자, 연료전지 용 촉매 등을 연구하고 있다. 소자설계 (mask design), 공정 (fabrication), 소자특성 모사 (device simulation), 소자 분석(characterization) 등 화합물 반도체 소자 및 나노구조 물질에 대한 포괄적 연구를 시행하고 있다.

학력

• [2003] 학사 서울대학교 / 응용화학부
• [2007] 박사 University of Florida / 화학공학과 / 화합물반도체

주요연구분야

GaN Based MOSFET
Ga2O3, GaN/AlGaN Based Sensors (Bio, Gas, Liquid)
InGaAs Based Photodetector
ZnO Based LED
화합물 반도체 공정

컨설팅 가능 분야

반도체 공정
신물질 광다이오드 (LED)
반도체 광센서
화합물 반도체 Power Device
바이오, 가스, 액체 센서

연구업적

• 연구보고서[20120622] 플래티늄 나노망을 이용한 초고감도 수소 센서(2/2)
• 연구보고서[20120530] 단일세포 기반 고효율 자기유지형 미생물 염료 전지를 이용한 청정에너지 생산 기술 개발(2/2)
• 일반논문[20231130] 계단형 양자우물 구조가 적용된 센서 광원 용 발광다이오드 소자
• 일반논문[20230802] H2S Sensing Characteristics of NiO Nanopetal Film
• 일반논문[20230315] Ga2O3 flake based Schottky diode hydrogen sensor
• 일반논문[20220501] 게이트 하부 식각 구조 및 HfO2 절연층이 도입된 AlGaN/GaN 기반 전계 효과 트랜지스터
• 일반논문[20220405] Low-Resistance Ti/Au Ohmic Contact on (001) Plane Ga2O3 Crystal
• 일반논문[20220131] p 형 반도체 층의 Mg 델타 도핑을 이용한 센서 광원 용 LED의 성능 향상
• 일반논문[20211201] (100) Plane beta-Ga2O3 Flake Based Field Effect Transistor and Its Hydrogen Response
• 일반논문[20200819] BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes
• 일반논문[20200810] Carbon Dioxide Sensing Characteristics of AlGaN/GaN High Electron Mobility Transistor with ZnO Nanorods
• 일반논문[20200801] AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer
• 일반논문[20200429] AlGaN/GaN Heterostructure Based Hydrogen Sensor with Temperature Compensation
• 일반논문[20200204] Hydrogen Sensing Performance of ZnO Schottky Diodes in Humid Ambient Conditions with PMMA Membrane Layer
• 일반논문[20190523] The Dependence of Crystal Plane on Hydrogen Sensing Properties of ZnO Bulk Substrates
• 일반논문[20180830] Hydrogen sensing characteristics of Pt Schottky diode on nonpolar m-plane (1100) GaN single crystals
• 일반논문[20180510] Hydrogen Sensing Characteristics of Pt Schottky Diodes on ((2)over-bar01) and (010) Ga2O3 Single Crystals
• 일반논문[20180330] Hydrothermal growth and luminescent properties of nonpolar a-plane (11-20) ZnCdO films for light-emitting diodes
• 일반논문[20180306] AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications
• 일반논문[20180216] Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability
• 일반논문[20180115] A comparative study of wet etching and contacts on ((2)over-bar01) and (010) oriented beta-Ga2O3
• 일반논문[20171130] Ohmic Contact Properties of Non-Polar (10(1)over-bar0) m-Plane Bulk GaN Crystals
• 일반논문[20171122] Influence of High-Energy Proton Irradiation on beta-Ga2O3 Nanobelt Field-Effect Transistors
• 일반논문[20171117] Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures
• 일반논문[20171115] Band offsets in ITO/Ga2O3 heterostructures
• 일반논문[20170915] Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing
• 일반논문[20170914] Ohmic contacts on n-type beta-Ga2O3 using AZO/Ti/Au
• 일반논문[20170801] Band alignment of Al2O3 with (-201) beta-Ga2O3
• 일반논문[20170707] Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing
• 일반논문[20170706] Ohmic Contact Properties of Photo-Chemically Etched Nonpolar A-Plane (11(2)over-bar0) GaN Films
• 일반논문[20170701] Valence and conduction band offsets in AZO/Ga2O3 heterostructures
• 일반논문[20170701] Conduction and valence band offsets of LaAl2O3 with (-201) beta-Ga2O3
• 일반논문[20170701] High Breakdown Voltage (-201) beta-Ga2O3 Schottky Rectifiers
• 일반논문[20170701] Detection of ammonia at low concentrations (0.1-2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors
• 일반논문[20170701] Band alignment of atomic layer deposited SiO2 and HfSiO4 with ((2)over-bar01) beta-Ga2O3
• 일반논문[20170612] Platinum-functionalized black phosphorus hydrogen sensors
• 일반논문[20170601] Novel microbial photobioelectrochemical cell using an invasive ultramicroelectrode array and a microfluidic chamber
• 일반논문[20170519] GaN Based Carbon Dioxide Sensor
• 일반논문[20170519] Terahertz Dielectric Response of Nonpolar a-plane GaN Films
• 일반논문[20170519] GaN Based Hydrogen Sensor in Humid Ambient
• 일반논문[20170501] Anisotropic electrical conductivity of surface-roughened semipolar (11(2)over-bar2) GaN films by photochemical etching
• 일반논문[20170501] High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
• 일반논문[20170501] Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer
• 일반논문[20170201] Highly sensitive nonpolar a-plane GaN based hydrogen diode sensor with textured active area using photo-chemical etching
• 일반논문[20170120] GaN based ethanol sensor
• 일반논문[20161215] Chemical etchingbehaviorofnon-polarGaNsidewalls
• 일반논문[20161101] Carrier Localization in Basal-Plane Stacking Faults in Si-Doped Nonpolar a-Plane (11-20) GaN Epilayers Containing Different Defect Densities
• 일반논문[20161101] Dielectric Response of Nonpolar a-plane (11-20) ZnO Crystals in the Terahertz Frequency
• 일반논문[20160610] Enhanced Hydrogen Detection Sensitivity of Semipolar (11¯22) GaN Schottky Diodes by SurfaceWet Etching on Schottky Contact
• 일반논문[20160603] Improved GaN based Hydrogen Sensors
• 일반논문[20160402] Evaluation of green light Emitting diode with p-type GaN interlayer
• 일반논문[20160226] Schottky contact on hydrothermally grown a-plane ZnO for hydrogen sensing and UV detection
• 일반논문[20160101] Hydrogen sensitive Schottky diode using semipolar (1 1 (2)over-bar 2) AlGaN/GaN heterostructures
• 일반논문[20150701] K doping effect on structural and optical properties of ZnO nanorods grown on semipolar (11-22) GaN films using a hydrothermal growth method
• 일반논문[20150524] Hydrothermally Grown Nonpolar a-plane ZnO and Its Applications
• 일반논문[20150223] Lattice Distortion Analysis of Nonpolar a-plane (11-20) GaN Films by Using a Grazing-Incidence X-Ray Diffraction Technique
• 일반논문[20150102] Investigation on Hydrothermal Growth of a-Plane ZnO Using Epitaxial Lateral Overgrowth
• 일반논문[20141031] Anisotropic microstructure of hydrothermally-grown non-polar a-plane ZnO on a-plane GaN film
• 일반논문[20140511] Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes
• 일반논문[20140219] Hydrogen sensing characteristics of semipolar (11-22) GaN Schottky diodes
• 일반논문[20131027] Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
• 일반논문[20131014] Investigation of carrier transport properties in semipolar (11-22) GaN films with low defect density
• 일반논문[20131001] AlGaN/GaN HEMT Based Hydrogen Sensor with Platinum Nanonetwork Gate Electrode
• 일반논문[20130828] Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN
• 일반논문[20130401] 유연성 폴리이미드 기판 위의 금 나노망
• 일반논문[20130201] Analysis of the Modified Williamson-Hall Plot of Non-polar a-plane GaN films
• 일반논문[20120920] Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition
• 일반논문[20120717] Liquid Slip on a Nanostructured Surface
• 일반논문[20120331] Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks
• 일반논문[20120101] Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Trnasistors
• 일반논문[20110701] Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons
• 일반논문[20110701] Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates
• 일반논문[20110501] Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors
• 일반논문[20110501] Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors
• 일반논문[20110301] Electric-Field-Driven Degradation in OFF-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
• 일반논문[20110201] AlGaN/GaN High Electron Mobility Transistor degradation under on-and off-state stress
• 일반논문[20110111] Ternary Pt-Fe-Co Alloy Electrocatalysts Prepared by Electrodeposition: Elucidating the Roles of Fe and Co in the Oxygen Reduction Reaction
• 일반논문[20100923] Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors
• 일반논문[20100901] Proton irradiation effects on AlN/GaN high electron mobility transistors
• 일반논문[20100901] Surface texturing of GaAs using a nanosphere lithography technique for solar cell applications
• 일반논문[20100831] 질화갈륨계 고전자이동도 트랜지스터에 대한 불소계 고분자 보호막의 영향
• 일반논문[20100728] Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates
• 일반논문[20100710] Hydrogen sensing Characteristics of non-polar a-plane GaN Schottky diodes
• 일반논문[20100426] Enhanced light extraction of nonpolar a-plane (11-20) GaN light emitting diodes on sapphire substrates by photo-enhanced chemical wet etching
• 일반논문[20100105] Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
• 일반논문[20091101] Proton irradiation effects on Sb-based heterojunction bipolar transistors
• 저서/역서[20200930] Wide Bandgap Semiconductor-Based Electronics
• 저서/역서[20190526] Wide Bandgap Semiconductor Materials and Devices 20
• 저서/역서[20190101] Gallium Oxide Technology, Devices and Applications
• 저서/역서[20170701] Advances in Ga2O3 materials, devices, and processing
• 저서/역서[20161016] Semiconductor Based Sensors
• 지식재산권[20220112] 수소 센서 및 이의 동작 방법
• 지식재산권[20200904] 수소 센서 및 이의 동작 방법
• 지식재산권[20180808] 식각을 이용한 질화갈륨 기반의 수소센서 및 이의 제조방법
• 지식재산권[20160621] 식각을 이용한 질화갈륨 기반의 수소센서 및 이의 제조방법
• 지식재산권[20150723] 자가 발광 섬유 및 이의 제조방법
• 지식재산권[20140901] 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법
• 지식재산권[20140901] 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법
• 지식재산권[20140723] 금속 나노네트워크층을 포함하는 가스 센서
• 지식재산권[20130829] 산화아연 나노로드를 이용한 금속 나노구조체 제조방법 및 그 응용
• 지식재산권[20120619] 금속 나노네트워크층을 포함하는 가스 센서
• 학술발표[20231027] Solar blind GaN/Ga2O3 p-n junction diode for UV photodetector
• 학술발표[20231024] AlGaN/GaN 이종접합트랜지스터 기반 고감도 고내구성의 수소센서
• 학술발표[20231011] UV detecting characteristics of GaN/Ga2O3 p-n junction
• 학술발표[20230922] 화합물반도체 기반 화학센서
• 학술발표[20230908] GaN/Ga2O3 heterostructure based UV photodetector
• 학술발표[20230531] Formation of 2-dimensional β phase Ga2O3 and its hydrogen sensing characteristics
• 학술발표[20230421] Tungsten trioxide based gasochromic hydrogen sensor
• 학술발표[20230329] Gasochromic hydrogen sensing characteristics of oxide semiconductor
• 학술발표[20230329] Hydrogen sulfide sensing characteristics of NiO nanostructure
• 학술발표[20221104] Ga2O3 이차원 나노구조물 기반 수소센서
• 학술발표[20221028] 2차원 산화갈륨 기반 쇼트키 다이오드의 수소 감지 특성
• 학술발표[20220830] β-Ga2O3 nanorod based solar blind UV photodetector
• 학술발표[20220825] Hydrogen sensing characteristics of Pt Schottky siode on 2-dimentional (100) plane Ga2O3
• 학술발표[20220421] β-Ga2O3 나노로드를 이용한 UV-C 광검출기
• 학술발표[20220407] NiO nanostructure for hydrogen sulfide sensing application
• 학술발표[20220407] Ga2O3 nanorod based UV-C photodetector
• 학술발표[20211109] Ga2O3 for hydrogen sensing applications
• 학술발표[20211028] Investigation on the electric characteristics of 2 dimensional β-phase Ga2O3 based field effect transistor for gas sensing applications
• 학술발표[20211028] β-phase Ga2O3 nano-belt based field effect transistor for hydrogen sensing
• 학술발표[20210701] Fabrication and Characterization of the β-Ga2O3 based Field Effect Transistor for Hydrogen Sensing
• 학술발표[20210423] Wet etching study of β -Ga2O3
• 학술발표[20210423] BCl3 based ICP Etching of (100) β-Ga2O3 flake
• 학술발표[20201111] AlGaN/GaN heterostructure based Schottky diode with NiO gate for gas sensing application
• 학술발표[20201111] Fabrication of (100) β-Ga2O3 Flake and Its Hydrogen Sensing Characteristics
• 학술발표[20201029] Ga2O3 nano-flake의 제작 및 응용
• 학술발표[20201020] Gas sensors based on wide bandgap semiconductor for harsh ambient applications
• 학술발표[20201007] 2-dimensional Ga2O3 based field effect transistor for hydrogen sensing application
• 학술발표[20191206] Robust gas sensors based on wide bandgap material
• 학술발표[20191031] Study of hydrogen sensing characteristics of β-Ga2O3
• 학술발표[20190830] Wide bandgap semiconductor based gas sensors
• 학술발표[20190829] Photochemical Etching of a-plane GaN and Its Application for Gas Sensing
• 학술발표[20190829] AlGaN/GaN based high electron mobility transistor with ZnO nanorods for ammonia sensing
• 학술발표[20190829] Gallium nitride material system for hydrogen sensing
• 학술발표[20190827] Nonpolar wide bandgap compound semiconductor and its application
• 학술발표[20190705] Humidity independent wide bandgap semiconductor based hydrogen sensor
• 학술발표[20190603] Compound semiconductor based gas sensor
• 학술발표[20190528] Hydrogen Sensor for High Temperature and Humid Environment Applications
• 학술발표[20181221] GaN 기반 가스센서의 원리 및 응용
• 학술발표[20181116] GaN based hydrogen sensors
• 학술발표[20181112] Humidity-insensitive GaN based hydrogen sensor with water-blocking layer for high temperature application
• 학술발표[20180516] Sensitivity Enhancement Techniques for Black Phosphorus-Based Gas Sensors
• 학술발표[20171116] Highly sensitive and robust GaN based hydrogen sensor
• 학술발표[20171109] Highly sensitive GaN based ammonia sensor
• 학술발표[20171030] Encapsulation of AlGaN/GaN High Electron Mobility Transistor based Hydrogen Sensor for Humid Ambient Sensing Application
• 학술발표[20171027] ZnO 나조구조를 이용한 GaN 기반 고감도 암모니아 센서
• 학술발표[20171002] Advances in Ga2O3 Processing and Devices
• 학술발표[20170921] Highly sensitive GaN based hydrogen sensors using nanostructure sensing materials
• 학술발표[20170530] GaN based Carbon Dioxide Sensor
• 학술발표[20170530] The birefringence study of nonpolar a-plane GaN films using terahertz time-domain spectroscopy
• 학술발표[20170529] GaN based hydrogen sensor in humid ambient
• 학술발표[20170512] Detection of carbon dioxide using GaN based diode
• 학술발표[20170427] ZnO 나조구조를 이용한 GaN 기반 이산화탄소 센서
• 학술발표[20170124] Hydrogen sensing characteristics of highly sensitive and reliable GaN based gas sensor
• 학술발표[20161028] 고습 환경에서 안정적으로 작동하는 GaN 기반 수소센서 개발
• 학술발표[20161021] Carrier transport property of photo-chemically etched a-pane GaN and its hydrogen response for gas sensor
• 학술발표[20161021] Highly sensitive and reliable GaN based hydrogen sensor in humid ambient using nano-porous membrane
• 학술발표[20161005] GaN based Ethanol Sensor
• 학술발표[20160503] Improved GaN based Hydrogen Sensors
• 학술발표[20160503] Schottky contact of nonpolar a-plane ZnO for sensing applications
• 학술발표[20160428] a-면 ZnO의 쇼트키 전극 특성 및 응용
• 학술발표[20160128] Hydrogen Sensing Enhancement of Semipolar GaN Schottky Diode Using Photoelectrochemical Wet Etching
• 학술발표[20151105] 표면 Texturing을 이용한 반분극 (11-22) GaN 쇼트키 다이오드 수소 센서의 특성 향상
• 학술발표[20151105] Mg이 도핑된 삽입층에 의한 녹색 발광다이오드의 효율 향상
• 학술발표[20151028] Nonpolar ZnO based light emitting diode
• 학술발표[20151027] Optical Properties of Nonpolar a-plane ZnO Crystals in the Terahertz Frequency Region
• 학술발표[20151023] Improvement of hydrogen detection in a-plane GaN Schottky diode by surface roughening
• 학술발표[20150526] Hydrothermally Grown Nonpolar a-plane ZnO and Its Applications
• 학술발표[20150430] 저비용 ZnO 기반 발광 다이오드
• 학술발표[20150424] Hydrothermally Grown ZnO Based Material For Solid State Lighting Applications
• 학술발표[20141117] The Growth Evolution of K-doped ZnO Nanorods by Hydrothermal Growth Method on Semipolar GaN Films
• 학술발표[20141117] Lateral Overgrowth of a-plane Epitaxial ZnO using Hydrothermal Method
• 학술발표[20141113] 무분극 ZnO 쇼트키 다이오드의 수소센싱
• 학술발표[20141105] Nonpolar a-plane ZnO Growth for LEDs
• 학술발표[20141023] Hydrothermally-Grown a-plane ZnO for Hydrogen Sensing
• 학술발표[20140507] Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes
• 학술발표[20140501] 다양한 GaN 결정면에 따른 수소 센서의 수소 감지 특성 연구
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